英*** OXFORD System 100 等离子刻蚀与沉积设备

该设备是***个灵活和功能强大的等离子体刻蚀和淀积工艺设备。 采用真空进样室进样可进行快速的晶片更换、采用多种工艺气体并扩大了允许的温度范围。

具有工艺灵活性，适用于化合物半导体，光电子学，光子学，微机电系统和微流体技术， PlasmalabSystem100可以有很多的配置，详情如下。

主要特点

· 可处理8 "晶片，也具有小批量（6 × 2"）预制和试生产的能力

· 选择单晶片/批处理或盒式进样，采用真空进样室。 该PlasmalabSystem100可以集成到***个集群系统中，采用中央机械手传送晶片，生产工艺中采用全片盒到片盒晶片传送. 采用***系列的电极进行衬底温度控制，其温度范围为-150 ° C至700° C

· 用于终端检测的激光干涉和/或光发射谱可安装在Plasmalab System100以加强刻蚀控制

· 选的6 或12路气箱为工艺流程和工艺气体提供了选择上的灵活性，并可以放置在远端，远离主要工艺设备

工艺

***些使用Plasmalab System100等离子刻蚀与沉积设备的例子：

· 低温硅刻蚀，深硅刻蚀和SOI工艺，应用于MEMS ，微流体技术和光子技术

· 用于激光器端面的III - V族刻蚀工艺，通过刻蚀孔、光子晶体和许多其他应用，材料范围广泛（InP, InSb, InGaAsP, GaAs, AlGaAs, GaN, AlGaN,等）

·  GaN、AlGaN等的预生产和研发工艺，比如HBLED和其它功率器件的刻蚀

· 高品质，高速率SiO2沉积，应用于光子器件

· 金属（Nb, W）刻蚀

 The equipment is a flexible ａnd powerful plasma etching ａnd deposition process equipment.The use of vacuum injection chamber allows for rapid wafer replacement, the use of a variety of process gases, ａnd the expansion of the permissible temperature range.

With process flexibility for compound semiconductors, optoelectronics, photonics, mems ａnd microfluidics, PlasmalabSystem100 can be configured in a number of configurations, as detailed below.

The main features

· capable of handling 8 "wafers, as well as small batch (6 × 2") prefabrication ａnd pilot production

· ｓelect single chip/batch or cartridge injection, ａnd use vacuum injection chamber.The PlasmalabSystem100 can be integrated into a cluster system, using a central manipulator to transfer wafers, ａnd a full box-to-box wafer process. Substrate temperatures are controlled using a series of electrodes, ranging from -150 ° C to 700° C

· laser interference and/or optical emission spectra for terminal detection may be installed at Plasmalab System100 to enhance etching control

· the selected 6 or 12 way airboxes provide flexibility in the selection of process flows ａnd process gases ａnd can be placed remotely away from the main process equipment

process

Some examples using Plasmalab System100 plasma etching ａnd deposition equipment:

· low temperature silicon etching, deep silicon etching ａnd SOI process, applied to MEMS, microfluidics ａnd photonic technologies

· a wide range of materials (InP, InSb, InGaAsP, GaAs, AlGaAs, GaN, AlGaN, etc.) through etchant holes, photonic crystals, ａnd many other applications

· pre-production ａnd r&d processes of GaN, AlGaN, etc., such as etching of HBLED ａnd other power devices

· high quality, high rate SiO2 deposition, applied to photonic devices

· metal (Nb, W) etching