日本JEOL电子束光刻系统 JBX-3050MV 

JBX-3050MV 是用于制作45nm～32nm 节点的掩模版/中间掩模版（mask/reticle）的可变矩形电子束光刻系统。 的技术实现了高速、高精度和高可靠性。 是基于加速电压50 kV的可变矩形电子束和步进重复式的光刻系统｡

产品规格：

产品特点：

· JBX-3050MV 是用于制作45nm～32nm 节点的掩模版/中间掩模版（mask/reticle）的可变矩形电子束光刻系统。

· 的技术实现了高速、高精度和高可靠性。

· 是基于加速电压50 kV的可变矩形电子束和步进重复式的光刻系统

· 利用步进重复式曝光的优点，结合曝光剂量调整功能及重叠曝光等功能，能支持下***代掩模版/中间掩模版（mask/reticle）图形制作所需要的多种补偿。

JBX - 3050 mv is used to produce 45 nm ~ 32 nm node mask template template (mask/reticle)/middle mask, a variable rectangular electron beam lithography system.The most advanced technology achieves high speed, high precision ａnd high reliability.It is a variable rectangular electron beam ａnd step - repeat lithography system based on 50 kV acceleration voltage.

Product specifications:

Stitching accuracy：Q + / - 3.8 nm

Set of time precision：Q + 7 nm

Product features:

JBX - 3050 mv is used to produce 45 nm ~ 32 nm node mask template template (mask/reticle)/middle mask, a variable rectangular electron beam lithography system.

· the most advanced technology achieves high speed, high precision ａnd high reliability.

· it is a variable rectangular electron beam based on the acceleration voltage of 50 kV ａnd a step-repeat lithography system

Exposure of the advantage of using the step ａnd repeat, combined with the exposure dose adjustment function ａnd overlap exposure, ａnd other functions, can support the next generation of mask template/middle mask template (mask/reticle) graphics required for a variety of compensation.