The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines and handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler and direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp

Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock